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GeneSiC

GeneSiC

GeneSiC是碳化硅技术的先驱和世界领先者,同时也投资于高功率硅技术。全球领先的工业和国防系统制造商依靠GeneSiC的技术来提升其产品的性能和效率。

GeneSiC技术在广泛的高功率系统中节约能源方面发挥着关键的作用。我们的技术可以有效地收获可再生能源。

GeneSiC电子元件运行温度更低,速度更快,更经济。我们拥有宽带隙功率器件技术的领先专利;一个预计到2020年将达到10亿美元的市场。

我们的核心竞争力是为客户的最终产品增加更多价值。我们的性能和成本指标是硅碳化物行业的标准。

Ranbir Singh博士于2004年创立了GeneSiC半导体公司。他对各种SiC功率器件(包括PiN,JBS和肖特基二极管,MOSFET,IGBT,晶闸管和场控晶闸管)进行了批判性理解和发表。他在各种评审期刊和会议论文集中共同撰写了100多种出版物,并且是26项美国专利的发明人。他首先在Cree公司进行了SiC功率器件的研究,然后在Gaithersburg MD的国家标准与技术研究所(NIST)进行了研究。他曾于2002年至2004年在国际功率半导体器件和集成电路(ISPSD)研讨会上担任技术委员会成员,并于2004年在IEDM担任技术委员会成员。2003年5月,又于2004年5月,他获得了IEEJ技术发展奖。超高压SiC器件。他获得印度德里印度理工学院(IIT)的B. Tech(电气工程)学位。他获得了北卡罗莱纳州立大学(NCSU)的硕士和博士学位,师从电力设备先驱B. Jayant Baliga教授。

GeneSiC is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC’s technology to elevate the performance and efficiency of their products.

GeneSiC technology plays a key enabling role in conserving energy in a wide array of high power systems. Our technology enables efficient harvesting of renewable energy sources.

GeneSiC electronic components run cooler, faster, and more economically. We hold leading patents on widebandgap power device technologies; a market that is projected to reach $1 billion by 2020.

Our core competency is to add more value to our customers’ end product. Our performance and cost metrics are setting standards in the Silicon Carbide industry.

Dr. Ranbir Singh founded GeneSiC Semiconductor Inc. in 2004. He has developed critical understanding and published on a wide range of SiC power devices including PiN, JBS and Schottky diodes, MOSFETs, IGBTs, Thyristors and field controlled thyristors. He has co-authored over 100 publications in various refereed journals and conference proceedings and is an inventor on 26 issued US patents. He conducted research on SiC power devices first at Cree Inc., and then at the National Institute of Standards and Technology (NIST), Gaithersburg MD. He has served on the Technical committee of the International Symposium on Power Semiconductor Devices and ICs (ISPSD) from 2002-04, and IEDM in 2004. In May 2003, and again in May 2004 he received the IEEJ Technical Development Award for the development of ultra high voltage SiC devices. He received the B. Tech (Electrical Engineering) degree from Indian Institute of Technology (IIT), Delhi, India. He received his MS & PhD degrees from North Carolina State University (NCSU) under the tutelage of power device pioneer Prof. B. Jayant Baliga.

显示全部Datasheet?产品规格书pdf?官网:www.genesicsemi.com

GeneSiC 供应商 免费推广 上海瑞齐德电​​子有限公司 (代理商)
座机:021-62331739 62330885   地址:上海市长宁区古北路678号1604B室   企业官网:www.richwoodchina.com
联系人:销售部    手机:13296109091    QQ:    E-mail:sales@richwoodchina.com
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